Measurement and Modeling of the n-channel and p-channel MOSFET's Inversion Layer Mobility at Room and Low Temperature Operation”, Colloque 3, suppl Bment au Journal de Physique 111, Volume 6

Abstract: A new semiempirical model for the electron and hole mobilities of the MOSFET inversion layers is pro-posed. This model takes into account the dependence of Coulombic, phonon, and surface roughness scattering on tem-perature and transverse field over a wide mnge of values (77 KSSG43 K and transverse fields up to 1.36 MVJcm). For the first time, the magnitude of the key panmeter q in defining the effective transverse field is found to be a continuous function of temperature for both electrons and holes. The E, @ dependences of the universal curves are observed to did-fer between the electrons and holes, particularly at low temperatures. The proposed model, verified by comparison of experimental data and simulated MOSFET I-V characteristics at different temperatures, can be easily incorporated into 2-D device simulators for device and circuit simulation. 1